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| ST3S01PHD BATTERY CHARGE I.C. s s s s s s s s DEDICATED I.C. FOR 1 LI-ION CELL OR 3 NI-MH CELLS 5 DIFFERENT OPERATING MODES 150 mA PRECHARGE CURRENT VERY LOW DROP CHARGE SWITCH (130mV @ 800mA) VERY LOW DROP REVERSE SWITCH (130mV @ 800mA) 5.7V OVER BATTERY OVER VOLTAGE PROTECTION CHARGER DETECTION MODE (VCHARGE-VBATT) DETECTION MODE SO-8 exposed pad DESCRIPTION This specification describes a dedicated I.C. which allows to charge 1 Lilon cell or 3 Nimh cells. The principle used to charge the batteries is the pulsed current, the monitoring is operated by the micro-controller of the application. This IC integrates one Power Switch and achieves the charge batteries in two different modes charge or precharge. One of this operating mode (charge or precharge) can be selected in a static or pulsed way by one I/ O from a micro-controller. The IC can supply power to accessories controlled by this I.C. in Reverse mode. The I.C. is available in the smaller and surface mounted SO-8 (exposed pad version) package. SCHEMATIC DIAGRAM September 2003 1/17 ST3S01PHD ABSOLUTE MAXIMUM RATINGS Symbol VBATT VCHARGE VFLAG VCMD-PWM VCMD-MODE ISWITCH Battery Voltage Charge Voltage (*) (VCHARGE - VBATT) Flag Control Voltage PWM Command Voltage CMD Command Voltage Internal Switch Continuous Max Current Internal Switch Peak Current Tstg TJ TAMB TAMB = 85C, Rthj-amb = 40C/W TAMB = 30C, Rthj-amb = 40C/W T<1ms Duty Cycle < 1% Rthj-amb = 40C/W Parameter Value -0.3 to 6 -12 to 16 -0.3 to 12 -0.3 to 12 -0.3 to 5 -0.3 to 5 -0.3 to 5 2 3 8 -55 to +125 -40 to +125 -40 to +85 Unit V V V V V V V A A A C C C VCHARGER-OK Charger Flag Control Voltage VCMD-REVERSE Reverse Command Voltage Storage Temperature Range Operating Junction Temperature Range Operating Ambient Temperature Range (if an adequate heatsink is provided) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. (*) The I.C. is automatically turned OFF when VCHARGE reaches typically 14V (VCHARGE rising edge); typical hysteresis is 700mV (VCHARGE falling edge) THERMAL DATA Symbol Rthj-case Parameter Thermal Resistance Junction-case SO-8 10 Unit C/W ORDERING CODES TYPE ST3S01PHD SO-8 exposed pad ST3S01PHD SO-8 exposed pad (T&R) ST3S01PHD-TR CONNECTION DIAGRAM (top view) 2/17 ST3S01PHD PIN DESCRIPTION Pin N 1 2 3 Symbol VBATT Name and Function 4 5 6 BATTERY pin: input pin when reverse mode is selected; output pin when in charge or precharge mode CMD-REVERSE Reverse Command pin: Enables the reverse mode when connected to a positive voltage higher than 1.2V. Logic pin internally pulled down. CMD-PWM PWM Command pin: allows to control the precharge or charge switch in PWM mode (refer to the Table 1 for the different operating modes). Logic pin internally pulled down. CMD-MODE Mode Command pin: allows to switch between precharge and charge mode (refer to OPERATING MODES Table). Logic pin internally pulled down. GND GND Pin CHARGER-OK CHARGER-OK output pin; open drain N-channel MOSFET that is in high impedance when the VCHARGE voltage drops below 2.5V and CMD-REVERSE is low. When the reverse function is activated, this open drain have the same information of the (VCHARGE -VBATT) FLAG. FLAG VCHARGE FLAG pin (VCHARGE -VBATT): open drain N-channel MOSFET that sinks current when the VCHARGE voltage is higher than the VBATT. CHARGER SUPPLY pin: input pin when charge or precharge mode is selected; output pin when in reverse mode. 7 8 OPERATING MODE CMD-PWM 0 0 1 1 CMD-MODE 0 1 0 1 Operating Function Selected PRECHARGE MODE (Default state) CHARGE MODE CHARGE and PRECHARGE switches are open CHARGE and PRECHARGE switches are open 3/17 ST3S01PHD I.C. BLOCK DIAGRAM POSSIBLE OPERATING MODES Five different operating modes are allowed: charge, precharge, reverse, charge+reverse and precharge+reverse. These operating modes can be achieved by properly selection of the CMD-REVERSE CMD-PWM and CMD-MODE (See POSSIBLE OPERATING MODE Table). PRECHARGE MODE The PRECHARGE function is composed by a switch and a 100mA current source which fully works for VCHARGE higher than 2.5V. When the CMD-MODE and the CMD-PWM are not leaded the switch is ON, being the input states held by an internal pull down resistor. This is used when the 4/17 battery is strongly discharged. In this case VBATT can be null (battery empty) and all the input pins are not held by any level (because the micro-controller is down), except the VCHARGE pin which is a main supply. The source of current supplies a constant current into the battery till its voltage level reaches the required level allowing to start the micro-controller (typically 3V). The current direction is from VCHARGE to VBATT. The reverse leakage current when the switch is ON must be null; this is obtained thanks to an internal circuitry that switch OFF the internal P-MOS when the VBATT is higher than VCHARGE, whatever the status of the CMD-MODE. The precharge function is also used to adjust the mean current. When the ST3S01PHD battery is fully charged the current into the battery has not to be more than C/25 (Nimh battery). In order to perform finely this, the CMD-PWM pin must be driven with PWM function (in the same time, the CMD-MODE must be kept low). The duty cycle allows to adjust the mean current needed. CHARGE MODE The CMD-MODE pin, when high (and CMD-PWM low), handles the switch in charge mode. This switch allows the battery charge with a strong current. The drop of this internal P-Channel MOS is very low (200mV @ 800mA) in order to optimize the efficiency of the charge. The switch is not internally protected against short circuit or overcurrent condition. When the switch is ON (CMD-MODE high and CMD-PWM low), the current direction into the chip is from VCHARGE to VBATT. The reverse current when the switch is ON must be null; this is obtained by mean of an internal circuitry that switch OFF the internal P-MOS when the VBATT is higher than VCHARGE, whatever the status of the CMD-MODE. When the CMD-MODE pin is low or in high impedance the switch is OFF, while it is ON when the signal on that pin is high. REVERSE MODE When the reverse function is selected by CDM-REVERSE pin, the switch allows to supply the accessories with a strong current. The drop of the internal P-Channel MOS is very low (200mV @ 800mA) and the switch properly work for VBATT higher than 2.5V. This allows to supply energy on the VCHARGE pin. When the switch is ON (CMD-REVERSE high) the current direction into the chip is from VBATT to VCHARGE. The reverse current (from VCHARGE to VBATT) when the switch is ON must be null; this is obtained by mean of an internal circuitry that switch OFF the internal P-MOS when the VCHARGE is higher than VBATT, whatever the status of the CMD-REVERSE. When the level of CMD-REVERSE pin is low or in high impedance, the switch is OFF, while it is ON when the signal on CMD-REVERSE pin is high. OVERVOLTAGE PROTECTION This function allows to held the switches OFF when the voltage level on VBATT is higher than a maximum voltage whatever are the values of CMD-PWM, CMD-MODE and CMD-REVERSE. This maximum voltage is shown in the electrical characteristic (typical threshold 5.7V). From the moment in which the o.v.protection is activated, it will be possible to turn ON again the switch only when the VCHARGE value decreases down to 2.5V typically, it doesn't matter which operation mode is selected. The protection works only when the battery is in charge or precharge mode, i.e. VCHARGE > VBATT. This represents, in fact, the typical application condition where the battery could increase its value, i.e. When charge or precharge mode are used. CHARGER DETECTION MODE This function allows to generate a digital signal (CHARGER-OK) to indicate if the VCHARGE voltage is higher than 2.5V and the reverse function is inactive. This functionality allows to determine if the charger is present or not; if the VCHARGE is lower than the 2.5V, the CHARGER-OK goes into high impedance (open drain). When the reverse function is active, this open drain have the VCHARGE-VBATT information. This circuitry is directly supplied from VCHARGE pin and works only for VCHARGE higher than 2.2V. VCHARGE-VBATT DETECTION MODE This function allows to generate a digital signal (VCHARGE-VBATT) flag to indicate if the VCHARGE voltage is higher than VBATT; if the VCHARGE is lower than the VBATT, this open drain goes into high impedance state. This circuitry is directly supplied from VCHARGE pin and works only for VCHARGE higher than 2.2V. THERMAL PROTECTION An internal thermal shutdown circuitry will switch OFF the P_MOS, only in precharge or in charge mode, when the junction temperature reaches typically 180C. This has been implemented in order to protect the device from overburning. 20C of thermal hysteresis will avoid a thermal oscillation. This circuitry is supplied from VCHARGE and, so, acts only on the precharge and charge switches. ESD PROTECTION Both VCHARGE and VBATT pins are protected against electrostatic discharge up to 4KV (HBM, MIL STD 833D. CHARGE VOLTAGE VCHARGE functional operating range is from 2.5V to 12V. At VCHARGE=14V typically the I.C. is automatically turned OFF and remains OFF up to 16V. A VCHARGE voltage higher than 16V can damage the IC. 5/17 ST3S01PHD POSSIBLE OPERATING MODE CMD-PWM 0 0 0 0 1 1 1 1 CMD-MODE 0 0 1 1 0 0 1 1 CMD-REVERSE 0 1 0 1 0 1 0 1 Operating Function Selected PRECHARGE PRECHARGE + REVERSE CHARGE CHARGE + REVERSE SWITCH OPEN REVERSE SWITCH OPEN REVERSE ELECTRICAL CHARACTERISTICS OF REVERSE SWITCH (TA = -40 to 85C, unless otherwise specified.) Symbol VBATT VDROP Parameter Reverse Block Operating Input Voltage Dropout Voltage Test Conditions Min. 2.5 VBATT= 3V IREVERSE=800mA VCMD-REVERSE=1.9V, VCMD-PWM=1.9V VCMD-MODE=1.9V 130 Typ. Max. 6 200 Unit V mV ILEAKAGE Reverse Leakage Current VBATT= 0V VCHARGE= 9V (from VCHARGE to VBATT, VCMD-REVERSE=1.9V, VCMD-PWM=1.9V tested on VBATT pin) VCMD-MODE=1.9V CMD-REVERSE Logic High (Switch ON) CMD-REVERSE Logic Low (Switch OFF) CMD-REVERSE Logic Typical Threshold CMD-REV Input Current VBATT= 3V IREVERSE=10mA VCMD-PWM=1.9V VCMD-MODE=1.9V VBATT= 3V IREVERSE=10mA VCMD-PWM=1.9V VCMD-MODE=1.9V VBATT= 3V IREVERSE=10mA VCMD-PWM=1.9V VCMD-MODE=1.9V VBATT= 3V IREVERSE=10mA VCMD-REVERSE=1.9V, VCMD-PWM=1.9V VCMD-MODE=1.9V IREVERSE=10mA VBATT= 5V VCMD-REVERSE=1.9V, VCMD-PWM=1.9V VCMD-MODE=1.9V 1.2 0 1 A VIH VIL VTH ICMD-REV V 0.4 0.75 V V 3 A 1 1.9 10 A tON-OFF Response Time 100 s 6/17 ST3S01PHD ELECTRICAL CHARACTERISTICS OF PRECHARGE SWITCH (TA = -40 to 85C, unless otherwise specified.) Symbol VCHARGE VDROP Parameter Precharge Block Operating Input Voltage Dropout Voltage Test Conditions Min. 2.5 VCHARGE= 2.5V to 9V IPRECHARGE=100mA VCMD-REVERSE=0V or floating VCMD-PWM=0V or floating VCMD-MODE=0V or floating VCHARGE= 2.5V to 9VVBATT= 0V VCMD-REVERSE=0V or floating VCMD-PWM=0V or floating VCMD-MODE=0V or floating VCHARGE= 0V VBATT= 5.5V VCMD-REVERSE=0V or floating VCMD-PWM=0V or floating VCMD-MODE=0V or floating VCHARGE= 2.5V to 9V VBATT= 0V to VCHARGE VCMD-REVERSE=0V or floating VCMD-PWM=0V or floating VCMD-MODE=0V to 1.9V at FMODE 100 100 0.13 Typ. Max. 12 1.2 Unit V V IPRECHARGE Precharge Current Limit (from VCHARGE to VBATT) 200 mA ILEAKAGE Precharge Leakage Current Limit (from VBATT to VCHARGE, tested on VCHARGE pin) PRECHARGE Switch Minimum Frequency 1 A FMODE Hz tON-OFF tOFF-ON Response Time Response Time 100 100 s s 7/17 ST3S01PHD ELECTRICAL CHARACTERISTICS OF CHARGE SWITCH (TA = -40 to 85C, unless otherwise specified.) Symbol VCHARGE VDROP Parameter Charge Block Operating Input Voltage Dropout Voltage Test Conditions Min. 2.5 VCHARGE= 2.5V to 5V ICHARGE=800mA VCMD-REVERSE=0V VCMD-PWM=0V VCMD-MODE=1.9V VBATT= 5.5V VCMD-PWM=0V 0.13 Typ. Max. 12 0.2 Unit V V ILEAKAGE Precharge Leakage VCHARGE= 0V Current Limit (from VBATT VCMD-REVERSE=0V to VCHARGE, tested on VCMD-MODE=1.9V VCHARGE pin) CMD-MODE Logic High (CHARGE MODE ON) CMD-MODE Logic Low (CHARGE MODE OFF) CMD-MODE Logic Typical Threshold CMD-MODE Input Current PRECHARGE Switch Minimum Frequency 1 A VIH VCHARGE= 2.5V to 5V ICHARGE=10mA VCMD-REVERSE=0V VCMD-PWM=0V VCHARGE= 2.5V to 5V VCMD-REVERSE=0V ICHARGE=10mA VCMD-PWM=0V VCHARGE= 2.5V to 5V ICHARGE=10mA VCMD-REVERSE=0V VCMD-PWM=0V VCHARGE= 3V to 5V ICHARGE=10mA VCMD-REVERSE=0V VCMD-PWM=0V VCMD-MODE=1.9V VCHARGE= 2.5V to 5V ICHARGE=10mA VCMD-REVERSE=0V VCMD-PWM=0V VCMD-MODE=0V to 1.9V at FMODE 1.2 V VIL 0.4 V VTH 0.75 V ICMD-REV 1 30 A FMODE 100 Hz tON-OFF Response Time 100 s ELECTRICAL CHARACTERISTICS OF CMD-PWM LOGIC PIN (TA = -40 to 85C, VCHARGE = 2.5 to 9V unless otherwise specified.) Symbol VIH VIL VTH ICMD-PWM Parameter CMD-PWM Logic High (SWITCH OFF) CMD-PWM Logic High (SWITCH ON) CMD-PWM Logic Typical Threshold CMD-PWM Input Current Test Conditions IPRECHARGE=10mA VCMD-REVERSE=0V IPRECHARGE=10mA VCMD-REVERSE=0V IPRECHARGE=10mA VCMD-REVERSE=0V IPRECHARGE=10mA VCMD-REVERSE=0V VCMD-MODE=1.9V VCMD-MODE=0V 0.4 VCMD-MODE=0V 0.75 VCMD-MODE=0V 1 VCMD-MODE=0V 30 A V V Min. 1.2 Typ. Max. Unit V 8/17 ST3S01PHD ELECTRICAL CHARACTERISTICS OF CHARGER DETECTION BLOCK (TA = -40 to 85C, VCHARGE = 2.2 to 9V, VCMD-REVERSE = 0V or floating unless otherwise specified.) Symbol VCHARGE VCHARGE-TH Parameter Charger Detection Block Operating Input Voltage Low Voltage Threshold Test Conditions Min. 2.2 with falling edge with rising edge, TA=25C VCHARGE= 3V ICHARGER-OK=1mA VFLAG= 0.2V ICHARGER-OK=1mA VCMD-REVERSE=1.9V VCHARGE= 2.2V VCHARGER-OK=10V 2.425 2.5 100 0.2 0.2 0 0 0.4 0.4 1 1 2.575 Typ. Max. Unit V V mV V V A A VCHARGE-HYS Low Voltage Hysteresis VCHARGER-OK CHARGER-OK Output Voltage Low VCHARGER-OK CHARGER-OK Output Voltage Low ICHARGER-OK CHARGER-OK Output Leakage Current ICHARGER-OK CHARGER-OK Output Leakage Current VFLAG= 0.2V VCHARGER-OK=10V VCMD-REVERSE=1.9V ELECTRICAL CHARACTERISTICS OF FLAG DETECTION BLOCK (TA =-40 to 85C, VCHARGE = 2.2 to 9V unless otherwise specified.) Symbol VCHARGE Parameter Test Conditions Min. 2.2 VFLAG= 0.2V VFLAG= 0.2V ICHARGE=20mA VBATT = VCHARGE IFLAG=1mA IFLAG=10mA IFLAG=1mA VFLAG= 10V 0.2 0.2 0.45 1 0.45 1 Typ. Max. Unit V V A V A FLAG Detection Block Operating Input Voltage VVCHARGE- FLAG (VCHARGE - VBATT) VBATT Voltage Low FLAG (VCHARGE - VBATT) IVCHARGEVBATT Leakage Current VVCHARGE- FLAG* (VCHARGE - VBATT) VBATT Voltage Low FLAG* (VCHARGE - VBATT) IVCHARGEVBATT Leakage Current * Guaranteed by design ELECTRICAL CHARACTERISTICS OF OVERLOAD PROTECTION (TA =-40 to 85C, VCHARGE>3V, VCHARGE>VBATT, VCMD-REVERSE=0V, VCMD-PWM=0V, VCMD-MODE=0V to 1.9V, unless otherwise specified.) Symbol VBATT tON-OFF Parameter Battery Input Threshold Response Time Test Conditions with rising edge Switches ON to OFF, TA = 25C Min. 5.4 Typ. 5.6 100 Max. 5.9 Unit V s 9/17 ST3S01PHD I.C. CONSUMPTION (TA =-40 to 85C, VCHARGE 300 A 78 250 A ESD PROTECTION Symbol ESD Parameter Electrostatic Discharge Immunity for VCHARGE and VBATT pins Test Conditions TA=25C Human Body Method MIL STD 833D-3015.7 Min. Typ. 4 Max. Unit kV TYPICAL PERFORMANCE CHARACTERISTICS (unless otherwise specified Tj = 25C) Figure 1 : Precharge Current Limit vs Temperature Figure 2 : Charge Drop Voltage vs Temperature 10/17 ST3S01PHD Figure 3 : Current Consumption vs Temperature Figure 6 : VBATT Leakage Current vs Temperature Figure 4 : Precharge Drop Voltage vs Temperature Figure 7 : Reverse Current Consumption vs Temperature Figure 5 : Reverse Drop Voltage vs Temperature Figure 8 : CMD-Mode Logic Threshold vs Temperature 11/17 ST3S01PHD Figure 9 : Command PWM Logic Threshold vs Temperature Figure 12 : CMD-REVERSE Input Current vs Temperature Figure 10 : CMD-MODE Input Current vs Temperature Figure 13 : CMD-PWM Input Current vs Temperature Figure 11 : Command Reverse Logic vs Temperature Figure 14 : CHARGER OK Voltage vs Temperature 12/17 ST3S01PHD Figure 15 : CHARGER OK Voltage vs Temperature Figure 18 : Minimum Battery Current vs Temperature Figure 16 : CHARGER OK Voltage Threshold vs Temperature Figure 19 : Minimum Battery Current vs Temperature Figure 17 : Flag Voltage Low vs Temperature Figure 20 : Overvoltage Protection vs Temperature 13/17 ST3S01PHD Figure 21 : Dynamic Precharge Mode 14/17 ST3S01PHD SO-8 (exposed pad) MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.80 0.40 4.80 5.80 1.27 3.81 4.00 1.27 0.6 8 (max.) 0.149 0.016 5.00 6.20 mm. MIN. 1.25 0 1.10 0.65 0.33 0.19 0.25 TYP MAX. 1.62 0.10 1.65 0.85 0.51 0.25 0.50 45 (max.) 0.189 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 MIN. 0.049 0.000 0.043 0.025 0.013 0.007 0.010 inch TYP. MAX. 0.064 0.004 0.064 0.033 0.020 0.010 0.019 A 0,10 A B B 15/17 ST3S01PHD Tape & Reel SO-8 MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 8.1 5.5 2.1 3.9 7.9 12.8 20.2 60 22.4 8.5 5.9 2.3 4.1 8.1 0.319 0.216 0.082 0.153 0.311 TYP MAX. 330 13.2 0.504 0.795 2.362 0.882 0.335 0.232 0.090 0.161 0.319 MIN. TYP. MAX. 12.992 0.519 inch 16/17 ST3S01PHD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 17/17 |
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